The Fogal Semiconductor Meets the Charge-Blocking Requirements

The Fogal Semiconductor Meets the Charge-Blocking Requirements
Fogal's marvelous semiconductor blocks passage of electrons into its output terminal, but passes displacement current dØ/dt into it.
The semiconductor is powered by (receives) normal electron current and excess dØ/dt , but outputs pure massless displacement
current dØ/dt . A charge blocker that passes dØ/dt is ideal for our overunity mechanisms, enabling them to be readily obtained as
we shall shortly see.
Energy, Flow, Finite Amount of Energy, and Collectors
We accent that the flow of energy in an electrical circuit is purely by means of the massless displacement current component (dØ/dt)
. The flow of the mass component (dm/dt) represents the "flow of work" (energy dissipation) in the circuit. Power is rigorously
the time rate of doing work, and electron current dq/dt is a part of power. It has nothing whatsoever to do with the time rate at which
energy is transported without loss; instead, power represents the rate at which energy "leaks" or is "lost" during its transport.
All measurement is work, not energy. Energy cannot be measured, even in theory, a priori. Energy is also a flow process, and never a
finite amount in one location. A specific differential of energy flow may exist on a specific finite collector. However, it only
represents a certain constant differential amount of energy flow compared to the universal vacuum energy flow or some other flow
reference point. It is like a whirlpool in the river. Energy is like the flowing water, and an "amount" of energy is like the amount of
water in the collecting whirlpool form (between its input flow and its output flow) at any time. Obviously, energy (ordering) forms
can come and go; the water flow itself remains. Any "magnitude of energy" is always a "trapped" amount of energy in a
"collector" (form).
Decoupling Current Components and Utilizing dØ/dt
The two components of electron current dq/dt can be decoupled, by blocking the dm/dt component while allowing the dØ/dt
displacement current to continue to flow. In our first paper, we pointed out one way: utilizing a special degenerate semiconductor
material whose electron gas relaxation time is extended, providing a finite time during which the material serves as a charge (i.e., a
charged particle) blocking device, while passing the flow of potential (the dØ/dt massless displacement current component) and
restraining the mass displacement current component dm/dt. With the advent of Fogal's semiconductor, the process becomes much
easier to obtain and utilize in practical machines and circuits.
In our second paper, we pointed out a second way: utilize an ordinary capacitor and ramp-up step-charging. We found, however, that
in most ordinary capacitors, the capacitive aspect is defeated by the sloppy movement of the plates and dielectric, converting dØ/dt
into dq/dt. Only a few very carefully selected capacitors are sufficiently rigid and can provide overunity. One must use rigidized
calibration standard capacitors for the ramp-charging by series steps method to be successful. With ordinary capacitors, however, one
can readily demonstrate that the efficiency can approach 1.0 rather than 0.50 as expected.